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2SK2586
Silicon N Channel MOS FET
REJ03G1020-0500 (Previous: ADE-208-358C) Rev.5.00 Sep 07, 2005
Application
High speed power switching
Features
* Low on-resistance RDS(on) = 7 m typ. * High speed switching * 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Drain (Flange) 3. Source
1
2
S 3
Rev.5.00 Sep 07, 2005 page 1 of 7
2SK2586
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID*2 ID(pulse)*1 IDR*2 IAP*3 EAR*3 Pch*2 Tch Tstg Ratings 60 20 60 240 60 45 174 125 150 -55 to +150 Unit V V A A A A mJ W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 60 20 -- -- 1.0 -- -- 35 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 7 10 60 3550 1760 500 35 260 480 370 0.94 140 Max -- -- 10 100 2.0 10 16 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 30 A, VGS = 10 V*4 ID = 30 A, VGS = 4 V*4 ID = 30 A, VDS = 10 V*4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 30 A, VGS = 10 V, RL = 1.0
IF = 60 A, VGS = 0 IF = 60 A, VGS = 0 diF / dt = 50 A / s
Rev.5.00 Sep 07, 2005 page 2 of 7
2SK2586
Main Characteristics
Power vs. Temperature Derating
200 500 200
10
PW
D C O pe
Maximum Safe Operation Area
10
0 s
Channel Dissipation Pch (W)
s
Drain Current ID (A)
150
100 50 20 10 5 2 1 0.5 0.1 Ta = 25C 0.3 1
1
= 10
n
m
s
100
m s
c
Operation in this area is limited by RDS(on)
(1
ra tio
sh
ot
)
(T = 25
50
C )
0
50
100
150
200
3
10
30
100
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100
10 V 6 V 5V Pulse Test
Typical Transfer Characteristics
100
VDS = 10 V Pulse Test
Drain Current ID (A)
60
3V
Drain Current ID (A)
80
4V
3.5 V
80
60
40
40
25C Tc = 75C
20
VGS = 2.5 V
20
-25C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
1.0 Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0005
Drain to Source Saturation Voltage VDS (on) (V)
Static Drain to Source on State Resistance RDS (on) ()
Pulse Test
0.8
0.6 ID = 50 A
VGS = 4 V 10 V
0.4
0.2
20 A 10 A 2 4 6 8 10
0
1
3
10
30
100
300
1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.5.00 Sep 07, 2005 page 3 of 7
2SK2586
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
0.04 500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 10 30 100 75C 25C Tc = -25C VDS = 10 V Pulse Test
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
Pulse Test
0.032
0.024
ID = 50 A 10, 20 A VGS = 4 V 10, 20, 50 A 10 V
0.016
0.008 0 -40
0
40
80
120
160
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
Reverse Recovery Time t rr (ns)
5000 2000 10000 5000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Capacitance C (pF)
1000 500 200 100 50 20 10 5 0.1
Ciss 2000 1000 500 Crss 200 100 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Coss
di / dt = 50 A / s VGS = 0, Ta = 25C
0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
ID = 50 A
Switching Characteristics
Gate to Source Voltage VGS (V)
20 5000 2000
100
80
16
Switching Time t (ns)
1000 500 200 100 50 20 10 5 0.1 0.3
60
VDS
VDD = 10 V 25 V 50 V VGS
td(off) tf tr td(on)
12
40
8
20
VDD = 50 V 25 V 10 V
0 40 80 120 160
4 0 200
VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 % 1 3 10 30 100
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.5.00 Sep 07, 2005 page 4 of 7
2SK2586
Reverse Drain Current vs. Source to Drain Voltage
100
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs. Channel Temperature Derating
200 IAP = 45 A VDD = 25 V duty < 0.1 % Rg > 50
Reverse Drain Current IDR (A)
Pulse Test 80 10 V 5V VGS = 0, -5 V
160
60
120
40
80
20
40 0 25
0
0.4
0.8
1.2
1.6
2.0
50
75
100
125
150
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 1.0C/W, Tc = 25C PDM PW T 1m 10 m 100 m 1 10 D= PW T
0.03
0.02 1 lse 0.0 t pu o h 1s
100
0.01 10
Pulse Width
PW (S)
Avalanche Test Circuit and Waveform
EAR = 1 * L * IAP2* 2 VDSS VDSS - VDD
VDS Monitor
L IAP Monitor
V(BR)DSS IAP VDD ID VDS
Rg Vin 15 V
D. U. T
50 0 VDD
Rev.5.00 Sep 07, 2005 page 5 of 7
2SK2586
Switching Time Test Circuit
Vin Monitor D.U.T. RL VDD = 30 V 90% td(on) 90% td(off) tf Vin Vout Vin 10 V 50 Vout Monitor 10% 10% 10%
Waveform
90%
tr
Rev.5.00 Sep 07, 2005 page 6 of 7
2SK2586
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Package Name TO-3P / TO-3PV
MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
4.8 0.2 1.5
15.6 0.3
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part Name 2SK2586-E Quantity 30 pcs Plastic magazine Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.5.00 Sep 07, 2005 page 7 of 7
0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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